ELECTRIC-FIELD DEPENDENCE OF THE HALL-EFFECT IN POLAR SEMICONDUCTORS - STREAMING TO ACCUMULATION TRANSITION

被引：12

作者：

WARMENBOL, P

PEETERS, FM

DEVREESE, JT

机构：

[1] UNIV ANTWERP,RIJSUNIV CENT ANTWERPEN,B-2020 ANTWERPEN,BELGIUM

[2] EINDHOVEN UNIV TECHNOL,5600 MB EINDHOVEN,NETHERLANDS

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.33.1213

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1213 / 1221

页数：9

共 22 条

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[2]

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[8] MOMENTUM DISTRIBUTION OF ELECTRONS IN POLAR SEMICONDUCTORS FOR HIGH ELECTRIC-FIELD [J].

DEVREESE, JT ;

EVRARD, R .

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[9] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].

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