SUPERCONDUCTING SUBMICRON BRIDGES FABRICATED BY ELECTRON-BEAM LITHOGRAPHY AND DRY ETCHING

被引：6

作者：

LANGHEINRICH, W

SPANGENBERG, B

BARTH, R

KURZ, H

机构：

[1] Institute of Semiconductor Electronic Aachen Technical University

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 21卷 / 1-4期

关键词：

Superconducting devices;

D O I：

10.1016/0167-9317(93)90115-L

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a three-level-based PMMA/Ti/Pt resist system for the fabrication of high T(c) superconducting structures with lateral dimensions in the 100nm region. The degradation of superconductivity after substractive sub-mu patterning of high T(c) YBCO-films is minimized. in order to perform conductance measurements, where large contact pads have to be attached to submicron bridges, high resolution electron beam lithography has been combined with optical lithography. Thereby, the YBCO-film remains protected by the bottom platinium layer until the final ion milling step. As a result, bridges with a linewidth down to 150 - 200nm and up to several mum in length have been fabricated, which retain their superconductivity even without oxygen reloading.

引用

页码：479 / 482

页数：4

共 10 条

[1] Jiang, Et al., Phys. Rev. Lett., 66, (1991)
[2] Albrecht, Langheinrich, Kurz, Poppe, Soltner, Schubert, J. Appl. Phys., 68, (1990)
[3] Kern, Lee, Laibowitz, Gupta, J. Vac. Sci. & Technol. B, 9, (1991)
[4] Cooper, Obertelli, Carrington, Loram, Phys. Rev. B, 44, (1991)
[5] Colino, Sacedon, Vicent, Appl. Phys. Lett., 59, (1991)
[6] Gieres, Schmidt, Hradil, Hosler, Seebock, Sputter deposition of epitaxial Y1Ba2Cu3Ox-films on SrTiO3, MgO, LaAlO3, NdGaO3 and YSZ/sapphire substrates, Physica C: Superconductivity, 185-195, (1991)
[7] Roas, Schultz, Endres, J. Less. Comm. Metals, 151, (1989)
[8] Parikh, Kyser, Proc. 8th Int. Conf. on Electron & Ion Beam Sci. & Technol., (1978)
[9] Kratschmer, Stephani, Beneking, Microcircuit Engineering, 83, pp. 15-22, (1983)
[10] Unger, Bogli, Beneking, Microelectronic Engineering, 5, pp. 279-286, (1986)

← 1 →