DOPING OF AMORPHOUS-HYDROGENATED CARBON-FILMS BY ION-IMPLANTATION

被引：15

作者：

AMIR, O

KALISH, R

机构：

[1] TECHNION ISRAEL INST TECHNOL, DEPT PHYS, IL-32000 HAIFA, ISRAEL

[2] TECHNION ISRAEL INST TECHNOL, INST SOLID STATE, IL-32000 HAIFA, ISRAEL

来源：

关键词：

D O I：

10.1016/0925-9635(92)90059-W

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous-hydrogenated carbon (a-C:H) films have been doped by light (B, C and N) and heavy (Tl, Pb and Bi) ion implantations. Ion-implantation leads to dramatic changes in film properties, however, substantial parts of these changes seem to be due to damage related effects. Only the Tl implantations cause changes in film properties which cannot be fully accounted for by pure damage effects. © 1992.

引用

页码：364 / 368

页数：5

共 16 条

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