SPIN-ORBIT CONTRIBUTION TO THE HALL-COEFFICIENT APPROACHING THE METAL-INSULATOR-TRANSITION - AN EXPLANATION FOR THE CRITICAL-BEHAVIOR OF GE-SB

被引:3
作者
CASTNER, TG
机构
[1] Department of Physics and Astronomy, University of Rochester, Rochester
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 08期
关键词
D O I
10.1103/PhysRevB.42.5317
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
It is demonstrated that the band spin-orbit contribution to the Hall conductivity yx can qualitatively explain the critical behavior of the Hall coefficient RH for Ge:Sb reported by Field and Rosenbaum. The spin-orbit contribution to yx for n-type Ge has been experimentally determined by Chazalviel and leads to an RH-1 versus (n/nc-1) dependence that is consistent with the Ge:Sb data. This result demonstrates a significant extraordinary contribution to RH for some very weakly paramagnetic metal-insulator systems when closely approaching the critical density nc. © 1990 The American Physical Society.
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页码:5317 / 5319
页数:3
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