FERROELECTRICS FOR NONVOLATILE MEMORIES

被引：28

作者：

CUPPENS, R

LARSEN, PK

SPIERINGS, GACM

机构：

[1] Philips Research Laboratories, 5600 JA Eindhoven

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(92)90431-P

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the late 1980s the interest in ferroelectric materials for memory applications has been renewed on the basis of concepts where ferroelectric thin film capacitors are embedded in Integrated Circuit processes. This paper discusses the application of ferroelectric thin films in memories. First ferroelectric thin film capacitors are reviewed followed by a discussion on the deposition techniques for ferroelectric thin films and on the integration with an IC technology. Next measured data of some important electrical characteristics for non-volatile memories are treated. Finally different ferroelectric memory cell configurations and their consequences on memory characteristics are discussed.

引用

页码：245 / 252

页数：8

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