DISLOCATION ETCHANT FOR (100) GALLIUM-PHOSPHIDE

被引：7

作者：

HAYES, TJ

RASUL, A

DAVIDSON, SM

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,MANCHESTER M60 1QD,LANCASHIRE,ENGLAND

[2] FERRANTI LTD,CHADDERTON,LANCASHIRE,ENGLAND

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1976年 / 5卷 / 03期

关键词：

D O I：

10.1007/BF02663277

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：351 / 361

页数：11

共 9 条

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DAVIDSON, SM ;

IQBAL, MZ ;

NORTHROP, DC .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 29 (02) :571-578

[3] EFFECT OF THE POLARITY OF THE III-V INTERMETALLIC COMPOUNDS ON ETCHING [J].

FAUST, JW ;

SAGAR, A .

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[4]

HAYES T, TO BE PUBLISHED

[5] ETCHING STUDIES OF IMPURITY PRECIPITATES IN PULLED GAP CRYSTALS [J].

IIZUKA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) :1190-&

[6]

MOTTRAM A, 1974, J CRYST GROWTH, V27, P193

[7] ETCH PIT STUDIES OF GAP LIQUID-PHASE EPITAXIAL LAYERS [J].

ROZGONYI, GA ;

LIZUKA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (05) :673-678

[8] EFFECTS OF DISLOCATIONS ON PHOTOLUMINESCENT PROPERTIES IN LIQUID-PHASE EPITAXIAL GAP [J].

SUZUKI, T ;

MATSUMOTO, Y .

APPLIED PHYSICS LETTERS, 1975, 26 (08) :431-433

[9]

Titchmarsh J. M., COMMUNICATION

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