ANALYSIS OF TEM IMAGE-CONTRAST OF QUANTUM-DOT SEMICONDUCTOR CLUSTERS IN GLASSES

被引:11
作者
LIU, LC
RISBUD, SH
机构
[1] Department of Mechanical, Aeronautical, Materials Engineering University of California, Davis, CA
关键词
D O I
10.1080/09500839008206500
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nanometre-size semiconductor clusters trapped in glass matrices represent a novel class of nonlinear optical materials. Microstructural characterization of these materials by conventional and high-resolution transmission electron microscopy (TEM and HRTEM) shows the sensitivity of bright-field image contrast to the nature of the specific II-VI semiconductors (CdS, CdSe) precipitated in the glass matrices. An analysis based on electron-scattering intensity and structure-factor calculations is presented to account for the quality of TEM and HRTEM images observed for CdS- and CdSe-containing quantum-dot glasses. © 1990 Taylor & Francis Group, LLC.
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页码:327 / 332
页数:6
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