HIGH-POWER LOW-THRESHOLD GA0.88IN0.12AS0.10SB0.90/AL0.47GA0.53AS0.04SB0.96 DOUBLE-HETEROSTRUCTURE LASER GROWN BY LIQUID-PHASE EPITAXY

被引：7

作者：

GRUNBERG, P

BARANOV, A

FOUILLANT, C

LAZZARI, JL

GRECH, P

BOISSIER, G

ALIBERT, C

JOULLIE, A

机构：

[1] Equipe de Microoptoélectronique de Montpellier, URA CNRS 392, Université de Montpellier II, Sciences et Techniques du Languedoc

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 04期

关键词：

SEMICONDUCTOR LASERS; LASERS; EPITAXY AND EPITAXIAL GROWTH;

D O I：

10.1049/el:19940239

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ga0.88In0.12As0.10Sb0.90/Al0.47Ga0.53As0.04Sb0.96 double heterostructure lasers emitting at 2.05 mum have been grown by liquid phase epitaxy on GaSb substrates. For pulsed operation of 300 mum-wide broad stripe lasers, output power as high as 80 mW per facet and threshold current density as low as 1.7kA/cm2 have been obtained for cavity lengths of 300 and 900mum, respectively. Mesa-stripe lasers 200 mum long showed room temperature threshold current of 200 mA with a characteristic temperature T0 congruent-to 115 K.

引用

页码：312 / 313

页数：2

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