PREPARATION AND PROPERTIES OF SPRAYED ANTIMONY TRISULFIDE FILMS

被引：47

作者：

BHOSALE, CH

UPLANE, MD

PATIL, PS

LOCKHANDE, CD

机构：

[1] Department of Physics, Shivaji University, Kolhapur

来源：

THIN SOLID FILMS | 1994年 / 248卷 / 02期

关键词：

D O I：

10.1016/0040-6090(94)90001-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Semiconducting Sb2S3 thin films have been prepared on glass substrates by spray pyrolysis. The films were deposited at optimised conditions of substrate temperature and solution concentration and have been characterised for their structural, optical and electrical properties. The films are semiconducting and amorphous. From the optical absorption study, the (indirect) bandgap is estimated to be 1.55 eV.

引用

页码：137 / 139

页数：3

共 16 条

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[2]

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[3]

Chokalingam M J, 1970, J PHYS D, V3, P1641, DOI DOI 10.1088/0022-3727/3/11/311

[4]

Cope D., 1959, [No title captured], Patent No. [US Patent, 2875359]