SUBMICROMETER FULLY SELF-ALIGNED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR

[1] GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS USING A SELF-ALIGNED SUBSTITUTIONAL EMITTER PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) : 8 - 10

[2] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[3] Madihian M., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P270

[4] NAGATA K, 1986, I PHYS C SER, V79, P589

[5] Nakajima O., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P266

[6] NAKAJIMA O, 1986, IECEJ ED868 TECH REP, P15

[1] GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS USING A SELF-ALIGNED SUBSTITUTIONAL EMITTER PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) : 8 - 10

[2] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[3] Madihian M., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P270

[4] NAGATA K, 1986, I PHYS C SER, V79, P589

[5] Nakajima O., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P266

[6] NAKAJIMA O, 1986, IECEJ ED868 TECH REP, P15