ELECTRICAL TRANSPORT IN NARROW-MINIBAND SEMICONDUCTOR SUPERLATTICES

被引：145

作者：

GRAHN, HT ^{[1
]}

VONKLITZING, K ^{[1
]}

PLOOG, K ^{[1
]}

DOHLER, GH ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,INST TECH PHYS,W-8520 ERLANGEN,GERMANY

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.43.12094

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Miniband transport in GaAs/AlAs superlattices with narrow band widths is investigated by electrical time-of-flight experiments as a function of temperature. Negative differential velocity is observed in all cases. The low-field drift mobility is inversely proportional to the temperature above 40 K, indicating miniband transport in the nondegenerate case with a temperature-independent scattering time. Below 40 K, the temperature dependence shows the signature of hopping transport. The occurrence of these two transport regimes can be taken as evidence for the existence of a mobility gap in these superlattices.

引用

页码：12094 / 12097

页数：4

共 22 条

[1] OPTICAL-PROPERTIES OF ALXGA1-XAS [J].

ASPNES, DE ;

KELSO, SM ;

LOGAN, RA ;

BHAT, R .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :754-767

[2] SCATTERING-CONTROLLED TRANSMISSION RESONANCES AND NEGATIVE DIFFERENTIAL CONDUCTANCE BY FIELD-INDUCED LOCALIZATION IN SUPERLATTICES [J].

BELTRAM, F ;

CAPASSO, F ;

SIVCO, DL ;

HUTCHINSON, AL ;

CHU, SNG ;

CHO, AY .

PHYSICAL REVIEW LETTERS, 1990, 64 (26) :3167-3170

[3] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181

[4] THERMAL SATURATION OF BAND TRANSPORT IN A SUPERLATTICE [J].

BROZAK, G ;

HELM, M ;

DEROSA, F ;

PERRY, CH ;

KOZA, M ;

BHAT, R ;

ALLEN, SJ .

PHYSICAL REVIEW LETTERS, 1990, 64 (26) :3163-3166

[5] HOPPING CONDUCTION IN MULTIQUANTUM WELL STRUCTURES [J].

CALECKI, D ;

PALMIER, JF ;

CHOMETTE, A .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (28) :5017-5030

[6] NEW MECHANISM FOR NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SUPERLATTICES [J].

DOHLER, GH ;

TSU, R ;

ESAKI, L .

SOLID STATE COMMUNICATIONS, 1975, 17 (03) :317-320

[7] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].

ESAKI, L ;

TSU, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&

[8] REENTRANT LOCALIZATION AND A MOBILITY GAP IN SUPERLATTICE MINIBANDS [J].

FERTIG, HA ;

DASSARMA, S .

PHYSICAL REVIEW B, 1990, 42 (02) :1448-1451

[9] MOBILITY OF CHARGE CARRIERS IN SEMICONDUCTING LAYER STRUCTURES [J].

FIVAZ, R ;

MOOSER, E .

PHYSICAL REVIEW, 1967, 163 (03) :743-&

[10]

KAZARINOV RF, 1972, SOV PHYS SEMICOND+, V6, P120

← 1 2 3 →