15GHZ MONOLITHIC MODFET-MSM INTEGRATED PHOTORECEIVER OPERATING AT 1.55-MU-M WAVELENGTH

被引：13

作者：

FAY, P

WOHLMUTH, W

CANEAU, C

ADESIDA, I

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

[2] BELL COMMUN RES INC,RED BANK,NJ 07701

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 09期

关键词：

INTEGRATED OPTOELECTRONICS; METAL-SEMICONDUCTOR-METAL STRUCTURES; MODFETS; OPTICAL RECEIVERS; PHOTODETECTORS;

D O I：

10.1049/el:19950484

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of an extremely wide bandwidth, long wavelength integrated photoreceiver implemented with InAlAs/InGaAs/InP MODFETS and metal-semiconductor-metal photodetectors (MSM-PDs) is presented. The transimpedance amplifier is implemented with 0.25 mu m gate length FETS to achieve high operational speed. The active feedback FET employed permits the amplifier's transimpedance to be varied from 5400 to 72 Omega. At a transimpedance of 350 Omega, a very flat optical to electrical frequency response with a -3dB frequency of 10 GHz is achieved. For lower transimpedance gains, a moderately gain-peaked response is achieved, with measured -3dB bandwidths of up to 15 GHz. To our knowledge, this is the fastest MODFET-based photoreceiver operating at a 1.55 mu m wavelength, and the only MSM-MODFET photoreceiver to have a bandwidth greater than 10 GHz.

引用

页码：755 / 756

页数：2

共 3 条

[1]

SANO E., YONHYAMA M., YAMAHATA S., MAISUOKA Y., 23GHz bandwidth monolithic photoreceiver compatible with lnP/InGaAs double-heterojunction bipolar transistor fabrication process, Electron. Lett., 30, 24, pp. 2064-2065, (1994)

[2]

AKAHORI Y., IKEDA M., KOHZKN A., AKATSU Y., 11GHz ultrawide-bandwidth monolithic photoreceiver using InGaAs pin PD and InAlAs/InGaAs HEMTs, Electron. Lett., 30, 3, pp. 267-268, (1994)

[3]

CHANG G.-K., HONG W.P., GIMLETT J.L., BHAD R., NGUYEN C.K., SASAKI G., YOUNG J.T., A 3GHz transimpedance OEIC receiver for 1.3 1.55μm liber-optic systems, IEEE Photonics Technol. Lett., 2, 3, pp. 197-199, (1990)

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