MECHANISM RESPONSIBLE FOR THE SEMIINSULATING PROPERTIES OF LOW-TEMPERATURE-GROWN GAAS

被引：134

作者：

LIU, X

PRASAD, A

CHEN, WM

KURPIEWSKI, A

STOSCHEK, A

LILIENTALWEBER, Z

WEBER, ER

机构：

[1] Department of Materials Science and Mineral Engineering, University of California, Berkeley

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 23期

关键词：

D O I：

10.1063/1.112490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanism responsible for the semi-insulating properties of low-temperature-grown GaAs is investigated by determining the concentration of arsenic antisite (AsGa)-related defects in the material. The concentrations of the defects in neutral and positively charged states, As 0 Ga and As+ Ga, are determined by near-infrared absorption and magnetic circular dichroism of absorption, respectively. Materials grown and annealed at different temperatures are investigated. We find that the defects are abundant in all samples studied, with the concentration of As0 Ga higher than that of As + Ga defects. The results indicate that the defects can account for the pinning of the Fermi energy and consequently also the semi-insulating properties of the material. © 1994 American Institute of Physics.

引用

页码：3002 / 3004

页数：3

共 16 条

[1]

BLISS DE, 1993, J ELECTRON MATER, V22, P1401, DOI 10.1007/BF02649985

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