PHOTOCONDUCTIVITY OF HEAVILY INDIUM DOPED ZINC TELLURIDE AT ELEVATED-TEMPERATURES

被引：2

作者：

BULLITT, J ^{[1
]}

ENTINE, G ^{[1
]}

WALD, FV ^{[1
]}

机构：

[1] TYCO LABS INC,16 HICKORY DR,WALTHAM,MA 02154

来源：

MATERIALS RESEARCH BULLETIN | 1974年 / 9卷 / 09期

关键词：

D O I：

10.1016/0025-5408(74)90032-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1157 / 1166

页数：10

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[3]

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[4]

ENTINE G, UNPUBLISHED

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[8] NON-G DONOR LEVELS AND KINETICS OF ELECTRON-TRANSFER IN N-TYPE CDTE [J].

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[9] ELECTRICAL TRANSPORT AND PHOTOELECTRONIC PROPERTIES OF ZNTEAL CRYSTALS [J].

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[10] OPTICAL PROPERTIES OF ZINC TELLURIDE [J].

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FAN, HY .

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