NON-LINEAR OPTICAL STUDIES OF PICOSECOND RELAXATION-TIMES OF ELECTRONS IN N-GAAS AND N-GASB

被引：47

作者：

KASH, K

WOLFF, PA

BONNER, WA

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[2] MIT,CAMBRIDGE,MA 02139

[3] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 02期

关键词：

D O I：

10.1063/1.93864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：173 / 175

页数：3

共 8 条

[1]

[Anonymous], SEMICOND SEMIMET

[2] CONDUCTION-BAND PARAMETERS IN GASB FROM HIGH-TEMPERATURE TRANSPORT MEASUREMENTS [J].

BASINSKI, J ;

WOOLLEY, JC ;

KWAN, CCY .

CANADIAN JOURNAL OF PHYSICS, 1972, 50 (11) :1068-&

[3] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J].

CONWELL, EM ;

VASSELL, MO .

PHYSICAL REVIEW, 1968, 166 (03) :797-+

[4] DIELECTRIC BREAKDOWN IN SOLIDS [J].

FROHLICH, H ;

PARANJAPE, BV .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (01) :21-32

[5] ELECTRICAL TRANSPORT AND BAND-STRUCTURE OF GAAS [J].

LEE, HJ ;

BASINSKI, J ;

JURAVEL, LY ;

WOOLLEY, JC .

CANADIAN JOURNAL OF PHYSICS, 1979, 57 (02) :233-242

[6] PICOSECOND NON-EQUILIBRIUM CARRIER TRANSPORT IN GAAS [J].

SHANK, CV ;

FORK, RL ;

GREENE, BI ;

REINHART, FK ;

LOGAN, RA .

APPLIED PHYSICS LETTERS, 1981, 38 (02) :104-105

[7] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J].

SHUR, MS ;

EASTMAN, LF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1677-1683

[8] DIFFERENCE-FREQUENCY VARIATION OF THE FREE-CARRIER-INDUCED, 3RD-ORDER NON-LINEAR SUSCEPTIBILITY IN N-INSB [J].

YUEN, SY ;

WOLFF, PA .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :457-459

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