METAL CONTACT DOUBLE INJECTION IN GAAS

被引：7

作者：

MEAD, CA

机构：

来源：

关键词：

D O I：

10.1109/PROC.1963.2355

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：954 / &

共 7 条

[1] COHERENT LIGHT EMISSION FROM GAAS JUNCTIONS [J].

HALL, RN ;

CARLSON, RO ;

SOLTYS, TJ ;

FENNER, GE ;

KINGSLEY, JD .

HOLONYAK, N .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (12) :2421-&

[3] DOPING OF SEMICONDUCTORS FOR INJECTION LASERS [J].

KEYES, RW .

[4] DOUBLE INJECTION IN INSULATORS [J].

LAMPERT, MA .

PHYSICAL REVIEW, 1962, 125 (01) :126-&

[5]

MEAD CA, 1962, REV SCI INST, V3, P376

[6] STIMULATED EMISSION OF RADIATION FROM GAAS P-N JUNCTIONS [J].

NATHAN, MI ;

DUMKE, WP ;

BURNS, G ;

DILL, FH ;

LASHER, G .

[7]

SPITZER WG, TO BE PUBLISHED