BAND PARAMETERS AND G-FACTOR FOR N-TYPE BI2TE3 FROM SCHUBNIKOW-DE HAAS EFFECT

被引：9

作者：

DRATH, P

LANDWEHR, G

机构：

来源：

关键词：

D O I：

10.1016/0375-9601(67)90807-9

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：504 / &

共 7 条

[1] INFRA-RED FARADAY ROTATION AND FREE CARRIER ABSORPTION IN BI2TE3
AUSTIN, IG
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 76 (488): : 169 - 179
[2] GALVANOMAGNETIC EFFECTS IN N-TYPE BISMUTH TELLURIDE
DRABBLE, JR
GROVES, RD
WOLFE, R
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (459): : 430 - 443
[3] LANDWEHR G, 1964, 7 COMPT REND C INT, P669
[4] LANDWEHR G, 1965, Z ANGEW PHYS, V20, P392
[5] DE HAAS-VAN ALPHEN EFFECT IN N-TYPE BI2TE3
MALLINSON, RB
RAYNE, JA
URE, RW
[J]. PHYSICS LETTERS, 1965, 19 (07): : 545 - +
[6] DE HAAS-VAN ALPHEN AND HIGH FIELD GALVANOMAGNETIC STUDIES OF THE BI2TE3 VALENCE BAND STRUCTURE
TESTARDI, LR
STILES, PJ
BURSTEIN, E
[J]. SOLID STATE COMMUNICATIONS, 1963, 1 (02) : 28 - 34
[7] URE RW, PERSONAL COMMUNICATI