ELECTRICAL-CONDUCTION IN A TIN-OXIDE-SILICON INTERFACE PREPARED BY SPRAY PYROLYSIS

被引：12

作者：

CHAUDHURI, UR

RAMKUMAR, K

SATYAM, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 04期

关键词：

D O I：

10.1063/1.344396

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1748 / 1752

页数：5

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共 7 条

[1] SPRAY-DEPOSITED ITO-SILICON SIS HETEROJUNCTION SOLAR-CELLS
ASHOK, S
SHARMA, PP
FONASH, SJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 725 - 730
[2] CHANG NS, 1979, J APPL PHYS, V49, P4833
[3] EFFICIENT PHOTOVOLTAIC HETEROJUNCTIONS OF INDIUM TIN OXIDES ON SILICON
DUBOW, JB
BURK, DE
SITES, JR
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (08) : 494 - 496
[4] NAGATOMO T, 1979, JPN J APPL PHYS, V1, P1103
[5] RIBEN AR, 1966, SOLID STATE ELECTRON, V9, P1053
[6] SHEWCHUN J, 1974, SOLID STATE ELECT, V17, P551
[7] ELECTRICAL CHARACTERISTICS OF SILICON-TIN OXIDE HETEROJUNCTIONS PREPARED BY CHEMICAL VAPOR-DEPOSITION
VARMA, S
RAO, KV
KAR, S
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2812 - 2822