THE CHARACTERISTICS OF MINORITY-CARRIER EXCLUSION IN NARROW DIRECT GAP SEMICONDUCTORS

被引：60

作者：

WHITE, AM

机构：

[1] Royal Signals & Radar, Establishment, Malvern, Engl, Royal Signals & Radar Establishment, Malvern, Engl

来源：

INFRARED PHYSICS | 1985年 / 25卷 / 06期

关键词：

D O I：

10.1016/0020-0891(85)90040-5

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

SEMICONDUCTOR MATERIALS

引用

页码：729 / 741

页数：13

共 12 条

[1] EXCLUSION EFFECT IN SEMICONDUCTORS WITH NON-INJECTING CONTACTS
ARONOV, DA
KNIGIN, PI
KOROLEV, YS
RUBINOV, VV
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (01): : 11 - 45
[2] CARRIER EXTRACTION IN GERMANIUM
ARTHUR, JB
BARDSLEY, W
BROWN, MACS
GIBSON, AF
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (01): : 43 - 50
[3] ELLIOTT CT, 1985, ELECTRON LETT, V21, P451
[4] CARRIER EXTRACTION IN GERMANIUM
GIBSON, AF
[J]. PHYSICA, 1954, 20 (11): : 1058 - 1059
[5] LADE RW, 1962, J ELECTRON CONTR, V13, P23
[6] CARRIER CONCENTRATION OF HG1-CHI CD CHI TE
LEONARD, WF
MICHAEL, ME
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 958 - 960
[7] ACCURATE SOLUTION OF AN IDEALIZED ONE-CARRIER METAL-SEMICONDUCTOR JUNCTION PROBLEM
MACDONALD, JR
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (JAN-F) : 11 - 37
[8] MINORITY-CARRIER EXCLUSION
MANIFACIER, JC
HENISCH, HK
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (03) : 279 - 281
[9] THEORY OF THE SWEPT INTRINSIC STRUCTURE
READ, WT
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (06): : 1239 - 1284
[10] SHANLEY JF, 1980, P ELECTRON DEVICES M, P501