ELECTRICAL-PROPERTIES OF BI2S3 THIN-FILMS PREPARED BY THE DIP DRY METHOD

被引:8
作者
NAYAK, BB [1 ]
ACHARYA, HN [1 ]
机构
[1] INDIAN INST TECHNOL,DEPT PHYS,KHARAGPUR 721302,W BENGAL,INDIA
关键词
D O I
10.1007/BF01144697
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:46 / 50
页数:5
相关论文
共 20 条
[1]  
BANDRIVCHAK IV, 1975, SOV PHYS SEMICOND+, V9, P773
[2]  
BLACK J, 1957, PHYS CHEM SOLIDS, V2, P246
[3]  
GALKIN G, 1952, ZH TEKH FIZ+, V22, P1533
[4]   SOME SEMICONDUCTING PROPERTIES OF BISMUTH TRISULFIDE [J].
GILDART, L ;
KLINE, JM ;
MATTOX, DM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 18 (04) :286-289
[5]   THE PREPARATION AND ELECTRICAL PROPERTIES OF BISMUTH TRISULFIDE [J].
GLATZ, AC ;
MEIKLEHAM, VF .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (12) :1231-1234
[6]  
GORIUNOVA NA, 1957, SOV PHYS TECH PHYS, V1, P1583
[7]   ELECTRICAL PROPERTIES OF SINGLE CRYSTAL BI2S3 [J].
HECKMAN, RC ;
MATTOX, DM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (07) :973-&
[8]  
HOKHBERG BM, 1937, J EXPL THEOR PHYS, V7, P1099
[9]  
Kazmerski LL., 1980, POLYCRYSTALLINE AMOR
[10]  
KONOROV PP, 1957, SOV PHYS TECH PHYS, V1, P1100