THE EFFECT OF ELECTRIC-FIELDS ON TIME-RESOLVED PHOTOLUMINESCENCE SPECTRA IN SEMICONDUCTORS

被引：9

作者：

ROSENWAKS, Y ^{[1
]}

NOZIK, AJ ^{[1
]}

YAVNEH, I ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT COMP SCI,IL-32000 HAIFA,ISRAEL

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 08期

关键词：

D O I：

10.1063/1.355964

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a rigorous analysis of the effects of electric fields on time-resolved photoluminescence in semiconductors. The results show that the effect of the field alone on the photoluminescence decay can be distinguished from that of field-enhanced surface recombination if the carrier injection levels, the surface recombination velocity at zero field, and the band bending in the dark are within certain limits. When these experimental conditions are met it is possible to extract the recombination and/or transfer velocity of free carriers in the presence of electric fields.

引用

页码：4255 / 4257

页数：3

共 12 条

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[10]

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