HIGH-DENSITY AND REDUCED LATCHUP SUSCEPTIBILITY CMOS TECHNOLOGY FOR VLSI

被引:7
作者
MANOLIU, J
TSENG, FH
WOO, BJ
MEIER, TJ
机构
关键词
D O I
10.1109/EDL.1983.25716
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:233 / 235
页数:3
相关论文
共 7 条
  • [1] ANTONIADIS DA, 1978, SEL78020 STANF U STA
  • [2] ESTREICH DB, 1978, IEDM TECH DIG DEC
  • [3] ESTREICH DB, 1980, THESIS STANFORD U ST
  • [4] HASHIMOTO K, 1982, IEDM TECH DIG DEC
  • [5] PAYNE RS, 1980, IEDM TECH DIG DEC
  • [6] A RETROGRADE P-WELL FOR HIGHER DENSITY CMOS
    RUNG, RD
    DELLOCA, CJ
    WALKER, LG
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1115 - 1119
  • [7] RUNG RD, 1982, IEDM TECH DIG DEC