PIEZOWIDERSTANDSMESSUNGEN AN NORMAL-SILIZIUM

[1] AUBREY JE, 1961, PHYS REV LETT, V10, pA4

[2] BROOKS H, 1955, ELECTRONS ELECTRONIC, V7, P151

[3] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J]. PHYSICAL REVIEW, 1956, 101 (03): : 944 - 961

[4] HERRING C, 1955, BELL SYST TECH J, V34, P287

[5] KAYES RW, 1960, SOL STATE PHYS, V11, P149

[6] SCATTERING OF CONDUCTION ELECTRONS BY LATTICE VIBRATIONS IN SILICON [J]. PHYSICAL REVIEW, 1960, 120 (06): : 2024 - 2032

[7] SCATTERING ANISOTROPIES IN N-TYPE SILICON [J]. PHYSICAL REVIEW, 1960, 120 (01): : 39 - 44

[8] MCSKIMIN HJ, 1953, J APP PHYS, V24, P998

[9] TEMPERATURE DEPENDENCE OF THE PIEZORESISTANCE OF HIGH-PURITY SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1957, 105 (02): : 525 - 539

[10] SCHMIDTTIEDMANN.KL, 1962, JUL P INT C PHYS SEM, P191

[1] AUBREY JE, 1961, PHYS REV LETT, V10, pA4

[2] BROOKS H, 1955, ELECTRONS ELECTRONIC, V7, P151

[3] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J]. PHYSICAL REVIEW, 1956, 101 (03): : 944 - 961

[4] HERRING C, 1955, BELL SYST TECH J, V34, P287

[5] KAYES RW, 1960, SOL STATE PHYS, V11, P149

[6] SCATTERING OF CONDUCTION ELECTRONS BY LATTICE VIBRATIONS IN SILICON [J]. PHYSICAL REVIEW, 1960, 120 (06): : 2024 - 2032

[7] SCATTERING ANISOTROPIES IN N-TYPE SILICON [J]. PHYSICAL REVIEW, 1960, 120 (01): : 39 - 44

[8] MCSKIMIN HJ, 1953, J APP PHYS, V24, P998

[9] TEMPERATURE DEPENDENCE OF THE PIEZORESISTANCE OF HIGH-PURITY SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1957, 105 (02): : 525 - 539

[10] SCHMIDTTIEDMANN.KL, 1962, JUL P INT C PHYS SEM, P191