REVERSE CURRENT OF HIGH-RESISTIVITY SILICON SURFACE-BARRIER COUNTERS

被引:7
作者
LANGMANN, HJ
MEYER, O
机构
来源
NUCLEAR INSTRUMENTS & METHODS | 1966年 / 44卷 / 01期
关键词
D O I
10.1016/0029-554X(66)90432-0
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:55 / &
相关论文
共 15 条
[1]  
BEMROSE CR, 1965, SURFACE SCI, V3
[2]  
DANNHAUSER F, 1965, SOLID STATE ELECTR, V8
[3]  
DEARNALEY G, AERER3662
[4]  
FOX RJ, 1962, IRE T NUCL SCI, VNS 9
[5]   METAL-SEMICONDUCTOR RECTIFIERS AND TRANSISTORS [J].
GOSSICK, BR .
SOLID-STATE ELECTRONICS, 1963, 6 (05) :445-452
[6]  
GOSSICK BR, 1964, POTENTIAL BARRIERS S, P110
[7]  
GROSCHWITZ E, 1959, Z ANGEW PHYS, V11, P9
[8]  
HOFKER WK, 1964, MEM SOC ROY SCI LIEG, V10
[9]  
JANTSCH O, 1960, SOLID STATE ELECTRON, V5, P249
[10]   PREPARATION OF HIGH-RESISTIVITY SILICON SURFACE-BARRIER DETECTORS FOR USE AT LARGE REVERSE BIAS VOLTAGES [J].
KLEMA, ED .
NUCLEAR INSTRUMENTS & METHODS, 1964, 26 (02) :205-208