SELECTIVE AREA GROWTH FOR OPTOELECTRONIC INTEGRATED-CIRCUITS (OEICS)

被引：36

作者：

DAVIES, GJ ^{[1
]}

DUNCAN, WJ ^{[1
]}

SKEVINGTON, PJ ^{[1
]}

FRENCH, CL ^{[1
]}

FOORD, JS ^{[1
]}

机构：

[1] UNIV OXFORD,PHYS CHEM LAB,OXFORD OX1 3QR,ENGLAND

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 9卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(91)90154-N

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Selective area epitaxy (SAE) is emerging as an important technology in the fabrication of optoelectronic integrated circuits. This paper reviews the current growth technologies for their applicability to the process of SAE. It discusses in detail the interaction on the masked area with the adjoining epitaxial window. The minimization of the features formed by this interaction whilst optimizing selectivity is seen as the main aim of the growth processes.

引用

页码：93 / 100

页数：8

共 35 条

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