FABRICATION AND PROPERTIES OF EPITAXIAL FERROELECTRIC HETEROSTRUCTURES WITH (SRRUO3) ISOTROPIC METALLIC OXIDE ELECTRODES

被引：412

作者：

EOM, CB ^{[1
]}

VANDOVER, RB ^{[1
]}

PHILLIPS, JM ^{[1
]}

WERDER, DJ ^{[1
]}

MARSHALL, JH ^{[1
]}

CHEN, CH ^{[1
]}

CAVA, RJ ^{[1
]}

FLEMING, RM ^{[1
]}

FORK, DK ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 18期

关键词：

D O I：

10.1063/1.110436

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial ferroelectric SrRuO3/Pb(Zr0.52Ti0.48)O3/SrRuO3 heterostructures have been fabricated employing isotropic metallic oxide electrodes on (100) SrTiO3 and (100) Si with an yttria stabilized zirconia buffer layer. The structures have been grown in situ by 90-degrees off-axis sputtering, which allows the growth of uniform stoichiometric films over large areas with excellent step coverage. X-ray diffraction, Rutherford backscattering spectroscopy, and cross-sectional transmission electron microscopy reveal high crystalline quality and coherent interfaces. They exhibit superior fatigue characteristics over those made with metal el showing little degradation over 10(10) cycles, with a large remnant polarization.

引用

页码：2570 / 2572

页数：3

共 18 条

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