GROWTH OF SEMICONDUCTOR CRYSTALS FROM SOLUTION USING TWIN-PLANE REENTRANT-EDGE MECHANISM

被引：89

作者：

FAUST, JW

JOHN, HF

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(64)90055-1

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1407 / &

共 21 条

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