MASS-SPECTROMETRIC STUDIES OF NITRIDATION OF SILICON

被引：28

作者：

LIN, SS ^{[1
]}

机构：

[1] USA,MAT & MECH RES CTR,WATERTOWN,MA 02072

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1975年 / 58卷 / 7-8期

关键词：

D O I：

10.1111/j.1151-2916.1975.tb11473.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：271 / 273

页数：3

共 16 条

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LEATT, PJ ;

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ROBERTS, EW .

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[2]

BILLY M, 1959, ANN CHIM PARIS, V4, P795

[3] KINETICS OF THE OXIDATION AND NITRIDATION OF SILICON AT HIGH TEMPERATURES [J].

EVANS, JW ;

CHATTERJI, SK .

JOURNAL OF PHYSICAL CHEMISTRY, 1958, 62 (09) :1064-1067

[4]

HORSLEY RF, 1971, THESIS U LEEDS

[5]

HUETTINGER KJ, 1969, HIGH TEMP HIGH PRESS, V1, P221

[6]

HUETTINGER KJ, 1970, HIGH TEMP HIGH PRESS, V2, P89

[7]

LIN SS, 1973, AMMRCTR739 TECH REPT

[8] KINETICS OF NITRIDATION OF SI POWDER COMPACTS [J].

MESSIER, DR ;

WONG, P .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1973, 56 (09) :480-485

[9] EFFECT OF OXYGEN IMPURITIES ON NITRIDATION OF HIGH-PURITY SILICON [J].

MESSIER, DR ;

WONG, P ;

INGRAM, AE .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1973, 56 (03) :171-172

[10]

Milne TA, 1969, ADVANCES HIGH TEMPER, V2, P107

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