CONDUCTIVITY ANISOTROPY + HOT ELECTRON TEMPERATURE IN SILICON

被引：21

作者：

GIBBS, WEK

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(64)90085-X

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：247 / &

共 13 条

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[J]. PHYSICAL REVIEW, 1962, 126 (05): : 1737 - &
[10] DISTRIBUTION FUNCTIONS FOR HOT ELECTRONS IN MANY-VALLEY SEMICONDUCTORS
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