GROWTH OF PURE AND TA-SUBSTITUTED BA3(VO4)2 SINGLE-CRYSTALS

被引：1

作者：

KRAMER, WE

STEWART, AM

HOPKINS, RH

机构：

[1] Westinghouse R&D Cent,, Pittsburgh, PA, USA, Westinghouse R&D Cent, Pittsburgh, PA, USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 89卷 / 2-3期

关键词：

DIELECTRIC PROPERTIES - TANTALUM AND ALLOYS;

D O I：

10.1016/0022-0248(88)90397-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A novel substrate material for the epitaxial growth of ferrite layers is presented. Single crystals of barium vanadate (Ba//3(VO//4)//2) and tantalum-substituted have been grown by the Czochralski growth technique. The crystals were characterized with respect to lattice constant, thermal expansion, hardness, dielectric constant, and loss tangent.

引用

页码：155 / 159

页数：5