PHOTOACOUSTIC INVESTIGATION OF SEMICONDUCTORS - INFLUENCE OF CARRIER DIFFUSION AND RECOMBINATION IN PBTE AND SI

被引：68

作者：

NETO, AP ^{[1
]}

VARGAS, H ^{[1
]}

LEITE, NF ^{[1
]}

MIRANDA, LCM ^{[1
]}

机构：

[1] INST PESQUISAS ESPACIAIS,ASSOCIADO SENSORES & MAT LAB,BR-12201 SAO JOSE CAMPOS,SP,BRAZIL

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.40.3924

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3924 / 3930

页数：7

共 20 条

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