DIFFERENTIAL REFLECTION SPECTRA OF HEAVILY DOPED SILICON AND GERMANIUM IN ULTRAVIOLET SPECTRAL REGION

被引：7

作者：

VOLFSON, AA

SUBASHIEV, VK

机构：

[1] Institute of Semiconductors, Academy of Sciences of the Ussr

来源：

PHYSICA STATUS SOLIDI | 1969年 / 33卷 / 01期

关键词：

D O I：

10.1002/pssb.19690330112

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of heavy doping on the reflection spectra of silicon and germanium is investigated by measuring the fractional change in reflectance, ΔR/R, between pure and doped materials. This effect arises from the narrowing of the forbidden gap in heavily doped materials. The form of the ΔR/R spectrum allows to reveal the critical points of the band structure, as in electro‐, piezo‐, or thermoreflectance measurements. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：149 / +

页数：1

共 13 条

[1] THERMOREFLECTANCE IN GERMANIUM [J].