MONTE-CARLO CALCULATION OF ELECTRON RESPONSE IN SI HALL-GEOMETRY SAMPLES IN A HIGH ELECTRIC-FIELD

被引：2

作者：

RAGUOTIS, R

机构：

[1] Semiconductor Physics Institute, Lithuanian Academy of Sciences, Vilnius

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1992年 / 174卷 / 02期

关键词：

D O I：

10.1002/pssb.2221740233

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

[No abstract available]

引用

页码：K67 / K71

页数：5

共 6 条

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ASCHE, M ;

SARBEI, OG .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 103 (01) :11-50

BOARDMAN, AD ;

FAWCETT, W ;

RUCH, JG .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 4 (01) :133-&

[3] ELECTRON DRIFT VELOCITY IN SILICON [J].

CANALI, C ;

JACOBONI, C ;

NAVA, F ;

OTTAVIANI, G ;

ALBERIGIQUARANTA, A .

[4]

GINTILAS S, 1984, FIZ TEKH POLUPROV, V18, P324

[5]

RAGUOTIS R, 1989, SOV PHYS SEMICOND, V23, P881

[6]

TAGUOTIS RA, 1991, LITH J PHYS, V31, P213