POSITRON-ANNIHILATION IN ELECTRON-IRRADIATED N-TYPE GAP CRYSTALS

被引：15

作者：

BRUDNYI, VN

VOROBIEV, SA

TSOI, AA

SHAHOVTSOV, VI

机构：

[1] SM KIROV POLYTECH INST,TOMSK,USSR

[2] ACAD SCI UKSSR,INST PHYS,KIEV,UKSSR

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1983年 / 79卷 / 1-4期

关键词：

D O I：

10.1080/00337578308207399

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：123 / 130

页数：8

共 12 条

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MARCHUK, ND
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[4] POSITRON-ANNIHILATION AND ELECTRICAL-PROPERTIES OF ELECTRON-IRRADIATED (ALMOST-EQUAL-TO 2 MEV) INAS CRYSTALS
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VOROBIEV, SA
TSOI, AA
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LANG, DV
[J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016
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[8] KARINS JP, 1980, B AM PHYS SOC, V25, P325
[9] ELECTRON-PARAMAGNETIC RESONANCE OF ELECTRON-IRRADIATED GAP
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[J]. PHYSICAL REVIEW B, 1981, 23 (12): : 6585 - 6591
[10] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
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