DETERMINATION OF HALL-MOBILITY OF HOT ELECTRONS IN GALLIUM-ARSENIDE USING 8 MM-MICROWAVES

被引：10

作者：

ACKET, GA

机构：

来源：

关键词：

D O I：

10.1016/0375-9601(67)90706-2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：374 / &

共 8 条

[1] ACKET GA, TO BE PUBLISHED
[2] ACKET GA, 1967, PHYS LETTERS, VA 24, P200
[3] BEHAVIOUR OF N-TYPE GALLIUM ARSENIDE IN STRONG MICROWAVE FIELDS
ACKET, GO
TLAM, H
[J]. ELECTRONICS LETTERS, 1967, 3 (06) : 258 - &
[4] BRASLAU N, 1967, PHYS LETTERS, VA 24, P531
[5] GUNN JB, 1966, P INT C PHYSICS SEMI
[6] HAMAGUCHI C, 1967, PHYS LETT, VA 24, P500
[7] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS
HILSUM, C
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02): : 185 - &
[8] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS
RIDLEY, BK
WATKINS, TB
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500): : 293 - &