EFFECT OF CARBON CONCENTRATION ON THERMAL-CONVERSION IN SEMIINSULATING GAAS

被引:7
作者
OBOKATA, T
OKADA, H
KATSUMATA, T
FUKUDA, T
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 03期
关键词
D O I
10.1143/JJAP.25.L179
中图分类号
O59 [应用物理学];
学科分类号
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页码:L179 / L181
页数:3
相关论文
共 10 条
[1]   CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE [J].
BROZEL, MR ;
CLEGG, JB ;
NEWMAN, RC .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) :1331-1339
[2]   QUANTITATIVE-ANALYSIS OF CARBON IN LIQUID-ENCAPSULATED CZOCHRALSKI GAAS [J].
HOMMA, Y ;
ISHII, Y ;
KOBAYASHI, T ;
OSAKA, J .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2931-2935
[3]  
HUGHES B, 1982, I PHYS C SER, V65, P57
[4]   THERMAL-CONVERSION OF GAAS [J].
KLEIN, PB ;
NORDQUIST, PER ;
SIEBENMANN, PG .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4861-4869
[5]  
Lagowski J., 1985, Thirteenth International Conference on Defects in Semiconductors, P73
[6]   OUT-DIFFUSION OF THE MAIN ELECTRON TRAP IN BULK GAAS DUE TO THERMAL-TREATMENT [J].
MAKRAMEBEID, S ;
GAUTARD, D ;
DEVILLARD, P ;
MARTIN, GM .
APPLIED PHYSICS LETTERS, 1982, 40 (02) :161-163
[7]   OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].
MARTIN, GM .
APPLIED PHYSICS LETTERS, 1981, 39 (09) :747-748
[8]   COMPENSATION MECHANISMS IN GAAS [J].
MARTIN, GM ;
FARGES, JP ;
JACOB, G ;
HALLAIS, JP ;
POIBLAUD, G .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2840-2852
[9]  
PUTLEY LH, 1960, HALL EFFECT RELATED, P89
[10]   EFFECTS OF STOICHIOMETRY ON THERMAL-STABILITY OF UNDOPED, SEMI-INSULATING GAAS [J].
TA, LB ;
HOBGOOD, HM ;
ROHATGI, A ;
THOMAS, RN .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5771-5775