LOW-VOLTAGE CMOS TRANSCONDUCTANCE CELL-BASED ON PARALLEL OPERATION OF TRIODE AND SATURATION TRANSCONDUCTORS

被引：24

作者：

COBAN, AL

ALLEN, PE

机构：

[1] School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 14期

关键词：

CMOS INTEGRATED CIRCUITS; TRANSCONDUCTORS;

D O I：

10.1049/el:19940756

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new linearity improvement technique for CMOS triode transconductors is presented. The idea is based on the parallel operation of CMOS triode and saturation region transductors. Simulation results indicate that 0.01% THD and linearity is possible with 800 mV peak-to-peak input differential signals and 1.5V supply voltage.

引用

页码：1124 / 1126

页数：3

共 6 条

[1]

GATTI U, 1990, P IEEE INT S CIRC SY, P1173

[2] IMPEDANCE BOOSTING TECHNIQUES BASED ON BICMOS TECHNOLOGY [J].