Self-developing properties of an inorganic electron beam resist and nanometer-scale patterning using a scanning electron beam

被引：15

作者：

Watanabe, H ^{[1
]}

Fujita, J ^{[1
]}

Ochiai, Y ^{[1
]}

Matsui, S ^{[1
]}

Ichikawa, M ^{[1
]}

机构：

[1] NEC CORP LTD,FUNDAMENTAL RES LABS,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 12B期

关键词：

inorganic electron beam resist; nanofabrication; electron beam lithography; electron-stimulated desorption; Auger electron spectroscopy; X-ray photoelectron spectroscopy; scanning electron microscope;

D O I：

10.1143/JJAP.34.6950

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The self-developing properties of an AlF3-doped LiF inorganic resist are studied. Electron-stimulated desorption (ESD) from the resist film is characterized by Auger electron spectroscopy and X-ray photoelectron spectroscopy. A conventional scanning electron microscope is employed for nanometer-scale direct writing and for in situ surface observation. Results show that a metal-rich layer which is formed by rapid and preferential fluorine desorption due to ESD suppresses subsequent fluorine desorption. This indicates that the surface diffusion of this residual metal plays an important rule in the self-developing reaction. Nanometer-scale lithography onto the LiF(AlF3) film is achieved using a scanning electron beam.

引用

页码：6950 / 6955

页数：6

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