A DISTRIBUTED MODEL OF JUNCTION TRANSISTOR AND ITS APPLICATION IN PREDICTION OF EMITTER-BASE DIODE CHARACTERISTIC BASE IMPEDANCE AND PULSE RESPONSE OF DEVICE

被引：56

作者：

GHOSH, HN

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1965.15603

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：513 / &

共 6 条

[1] TRANSIENT ANALYSIS AND DEVICE CHARACTERIZATION OF ACP CIRCUITS
ASHAR, KG
GHOSH, HN
ALDRIDGE, AW
PATTERSON, LJ
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (03) : 207 - 223
[2] SOME ASPECTS OF THE DESIGN OF POWER TRANSISTORS
FLETCHER, NH
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (05): : 551 - 559
[3] Murphy G. M., 1960, ORDINARY DIFFERENTIA
[4] Pipes L.A., 1953, J APPL PHYS, V24
[5] 2-DIMENSIONAL CURRENT FLOW IN JUNCTION TRANSISTORS AT HIGH FREQUENCIES
PRITCHARD, RL
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1152 - 1160
[6] TURNER RJ, 1954, TELETECH, P78