HIGH-PRESSURE SOLUTION GROWTH OF GAN+

被引：100

作者：

MADAR, R ^{[1
]}

JACOB, G ^{[1
]}

HALLAIS, J ^{[1
]}

FRUCHART, R ^{[1
]}

机构：

[1] LABS ELETR & PHYS APPL,3 AVE DESCARTES,94450 LIMEIL BREVANNES,FRANCE

来源：

关键词：

D O I：

10.1016/0022-0248(75)90131-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：197 / 203

页数：7

共 24 条

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