学术探索
学术期刊
新闻热点
数据分析
智能评审

SURFACE-GENERATION STATISTICS AND ASSOCIATED THERMAL CURRENTS IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES

被引：22
作者：
MAR, HA
SIMMONS, JG
机构：
[1] UNIV TORONTO,ELECT ENGN DEPT,TORONTO,ONTARIO,CANADA
[2] UNIV TORONTO,MAT RES CTR,TORONTO,ONTARIO,CANADA
来源：
PHYSICAL REVIEW B | 1975年 / 11卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.11.775
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：775 / 783
页数：9
相关论文
共 5 条
[1]  
MAR HA, 1974, SOLID STATE ELECTRON, V17
[2]   STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].
SHOCKLEY, W ;
READ, WT .
PHYSICAL REVIEW, 1952, 87 (05) :835-842
[3]   THEORY OF NON-STEADY-STATE INTERFACIAL THERMAL CURRENTS IN MOS DEVICES, AND DIRECT DETERMINATION OF INTERFACIAL TRAP PARAMETERS [J].
SIMMONS, JG ;
TAYLOR, GW .
SOLID-STATE ELECTRONICS, 1974, 17 (02) :125-130
[4]   THERMAL BULK EMISSION AND GENERATION STATISTICS AND ASSOCIATED PHENOMENA IN METAL-INSULATOR-SEMICONDUCTOR DEVICES UNDER NON-STEADY-STATE CONDITIONS [J].
SIMMONS, JG ;
MAR, HA .
PHYSICAL REVIEW B, 1973, 8 (08) :3865-3874
[5]   HIGH-FIELD ISOTHERMAL CURRENTS AND THERMALLY STIMULATED CURRENTS IN INSULATORS HAVING DISCRETE TRAPPING LEVELS [J].
SIMMONS, JG ;
TAYLOR, GW .
PHYSICAL REVIEW B, 1972, 5 (04) :1619-&
1