HIGH EXTERNAL EFFICIENCY (36-PERCENT) 5-MU-M MESA ISOLATED GAAS QUANTUM WELL LASER BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：9

作者：

WELCH, DF ^{[1
]}

SCHAUS, CF ^{[1
]}

SHEALY, JR ^{[1
]}

机构：

[1] GE,CTR DISCREET SEMICOND DEVICE,SYRACUSE,NY 13221

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 02期

关键词：

D O I：

10.1063/1.95706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：121 / 123

页数：3

相关论文

共 5 条

[1] CASEY HC, 1978, HETEROSTRUCTURE LA A, P31
[2] HIGHLY EFFICIENT (GAAL)AS BURIED-HETEROSTRUCTURE LASERS WITH BURIED OPTICAL GUIDE
CHINONE, N
SAITO, K
ITO, R
AIKI, K
SHIGE, N
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 513 - 516
[3] ONE WATT CW VISIBLE SINGLE-QUANTUM-WELL LASERS
LINDSTROM, C
BURNHAM, RD
SCIFRES, DR
PAOLI, TL
STREIFER, W
[J]. ELECTRONICS LETTERS, 1983, 19 (03) : 80 - 81
[4] THORPE AJS, 1982, I PHYS C SER, V65, P589
[5] RESONANT MODES OF GAAS JUNCTION LASERS
ZACHOS, TH
RIPPER, JE
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1969, QE 5 (01) : 29 - &