CALCULATED GROUND-STATE PROPERTIES OF SILICON-CARBIDE

被引：70

作者：

CHURCHER, N

KUNC, K

HEINE, V

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1986年 / 19卷 / 23期

关键词：

D O I：

10.1088/0022-3719/19/23/006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：4413 / 4426

页数：14

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