A RADIATION SOURCE FOR X-RAY-LITHOGRAPHY

被引:1
作者
CULLMANN, E
RICHTER, F
THOMPSON, P
GENTILI, M
机构
[1] Karl Süss KG GmbH and Co, D-8046 Garching
[2] Consiglio Nationale delle Ricerche, Istituto di Elettronica dello Stato Solido, I-00156 Roma
关键词
D O I
10.1016/0167-9317(91)90098-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The vast majority of x-ray lithography efforts are presently using electron storage rings as an x-ray light source. These sources offer a unique combination of high brightness and good beam collimation. High brightness is required for future mass production of semiconductor devices, good light collimation is required for good mask-to-mask overlay especially on large step fields. Point sources can supplement work at synchrotron beamlines or can serve as an x-ray lithography entry tool if the spectrum is similar to synchrotron radiation and if sufficient beam collimation is provided. The latter is only possible at the expense of throughput. The plasma focus source described here meets these requirements of synchrotron compatibility. The broadband continuum radiation is centered around 0.9 nm. The degree of beam collimation used allows the use of large exposure windows envisioned for mass production. Using a high resolution Si/Au mask 200 nm features printed at a 40-mu-m gap in 1-mu-m thick Novolak-type photoresist have been obtained.
引用
收藏
页码:299 / 303
页数:5
相关论文
共 3 条
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  • [2] Cullman, Kunneth, Neff, Stephan, Comparison of Different X-Ray Sources Using the Same Printing Process Parameters, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 5, 3, pp. 638-640, (1987)
  • [3] Gentili, Et al., Electron scattering effects in master mask fabrication by single layer process for submicron x-ray lithography, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 7, (1989)