ELECTRON-EMISSION FROM SI(100) NEGATIVE ELECTRON-AFFINITY SURFACES

被引：1

作者：

BURT, MG ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 OHE,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1977年 / 10卷 / 08期

关键词：

D O I：

10.1088/0022-3727/10/8/015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1161 / 1166

页数：6

共 8 条

[1] EFFECT OF GAAS ELECTRONIC-STRUCTURE ON PERFORMANCE OF GAAS-(CS,O) PHOTOEMITTER [J].

BURT, MG ;

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APPLIED PHYSICS LETTERS, 1976, 28 (01) :5-6

[2] FACE DEPENDENCE OF EMISSION OF ELECTRONS FROM GAAS ACTIVATED TO NEGATIVE ELECTRON-AFFINITY [J].

BURT, MG ;

INKSON, JC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (05) :721-727

[3] STUDY OF EMISSION FROM (1,1,1) FACES OF GAAS NEGATIVE ELECTRON AFFINITY PHOTOEMITTERS [J].

BURT, MG ;

INKSON, JC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (01) :43-53

[4] EMISSION FROM (1,1,0) FACE OF NEGATIVE-ELECTRON AFFINITY GALLIUM-ARSENIDE [J].

BURT, MG ;

INKSON, JC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (01) :L5-L7

[5] EMISSION OF X ELECTRONS FROM (110) GAAS ACTIVATED TO NEGATIVE ELECTRON AFFINITY [J].

BURT, MG ;

INKSON, JC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (01) :L3-L5

[6] EFFECT OF OVERLAYER THICKNESS ON ELECTRON-EMISSION FROM SI=CS-O NEA SURFACES [J].

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HOWORTH, JR ;

HOLTOM, R .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (14) :2155-&

[7] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].

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BERGSTRESSER, TK .

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[8] ELECTRONIC BAND STRUCTURE AND COVALENCY IN DIAMOND-TYPE SEMICONDUCTORS [J].

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JONES, RO .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (04) :719-&

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