DETERMINATION OF WAVELENGTH DEPENDENCE OF THE REFLECTIVITY AT AR COATED DIODE FACETS

被引：12

作者：

LUO, B ^{[1
]}

WU, L ^{[1
]}

CHEN, J ^{[1
]}

机构：

[1] SICHUAN UNIV,DEPT OPTOELECTR,CHENGDU,PEOPLES R CHINA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 11期

关键词：

D O I：

10.1109/68.250044

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wavelength dependence of the reflectivity at an AR coated diode facet has been determined by comparing the spontaneous emission spectra obtained under the same bias condition before and after this facet is AR coated. Reliable measurements can be achieved by proper choice of the bias current.

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收藏

页码：1279 / 1281

页数：3

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