HIGH-SPEED PHOTOCONDUCTIVITY AND INFRARED TO VISIBLE UPCONVERSION IN GAP LIGHT-EMITTING-DIODES

被引：8

作者：

MOSER, K

EISFELD, W

WERLING, U

WAHL, S

PRETTL, W

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 07期

关键词：

D O I：

10.1063/1.95390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：711 / 713

页数：3

共 10 条

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[3]

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[5] INFRARED TO VISIBLE UPCONVERSION USING GAP LIGHT-EMITTING-DIODES [J].

EISFELD, W ;

WERLING, U ;

PRETTL, W .

APPLIED PHYSICS LETTERS, 1983, 42 (03) :276-278

[6] SYMMETRY OF ELECTRON STATES IN GAP [J].

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[7]

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[9] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J].

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HOPFIELD, JJ .

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[10]

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