CARRIER-GAS EFFECTS ON CHARACTERISTICS OF COPPER CHEMICAL-VAPOR-DEPOSITION USING HEXAFLUORO-ACETYLACETONATE-COPPER(1) TRIMETHYLVINYLSILANE

被引：46

作者：

AWAYA, N

ARITA, Y

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01

来源：

THIN SOLID FILMS | 1995年 / 262卷 / 1-2期

关键词：

CHEMICAL VAPOR DEPOSITION; COPPER; METALLIZATION; SEMICONDUCTORS;

D O I：

10.1016/0040-6090(95)05815-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The deposition characteristics of copper chemical vapor deposition using the liquid precursor hexafluoro-acetylacetonate-copper(1) trimethylvinylsilane are investigated. The precursor supply is directly controlled by a liquid-injection system. The deposition rate and selectivity on the substrate surface strongly depend on the carrier gas. A hydrogen carrier-gas system has a higher deposition rate and lower selectivity than an argon carrier gas. The deposition rate of copper is proportional to the square root of the precursor partial pressure under reaction-rate-limited conditions at a substrate temperature below 200 degrees C. In these conditions, a deposition rate of up to 70 nm min(-1) and an apparent activation energy of 11 kcal mol(-1) has been obtained. Surface morphology and step coverage improves with decreasing substrate temperature and increasing precursor supply. A smooth film with a low resistivity of 2.0 Omega cm can be formed superconformally on the step coverage at a substrate temperature below 18 degrees C and a high aspect ratio vias can be filled under the optimum deposition conditions.

引用

页码：12 / 19

页数：8

共 22 条

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