We have measured the energy relaxation of hot carriers in p- and n-type GaAs/GaAlAs quantum wells by detecting time-resolved hot luminescence using two-pulse intensity correlation with 150fs resolution. In the former p equals 7 multiplied by 10**1**7 cm** minus **3 and the well width d//w equals 60 Angstrom; the n-type sample has n equals 2 multiplied by 10**1**7 cm** minus **3 and d//w equals 258 Angstrom. The excitation density is approximately 3 multiplied by 10**1**6 cm** minus **3, and the photon energy h nu equals 2. 0 eV. Assuming that the photon excess energy is shared evenly among the carriers, the initial mean carrier energy is approximately 14 meV for the p-type sample and 62 meV for the n-type sample.
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Da Costa J. A. P., 1987, 18th International Conference on the Physics of Semiconductors, P1327