GROWTH AND PROPERTIES OF LASER-ABLATED BI2SR2CACU2O8+DELTA THIN-FILMS

被引：10

作者：

SEEMANN, R ^{[1
]}

HANISCH, F ^{[1
]}

SEWING, A ^{[1
]}

JOHNSON, RL ^{[1
]}

DEREUS, R ^{[1
]}

NIELSEN, M ^{[1
]}

机构：

[1] RISO NATL LAB,DEPT SOLID STATE PHYS,DK-4000 ROSKILDE,DENMARK

来源：

PHYSICA C | 1992年 / 199卷 / 1-2期

关键词：

D O I：

10.1016/0921-4534(92)90547-P

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of Bi2Sr2CaCu2O8+delta have been fabricated by laser ablation on single crystal M(g)O (001), LaAlO3 (001) and NdGaO3 (001) substrates. The superconducting transition temperature T(C0) is above 80 K with critical current densities of 4 x 10(5) A/cm2 at 55 K. The structure and morphology of the films were investigated using scanning electron microscopy, scanning tunnel microscopy and X-ray diffraction. All films show c-axis orientation with a texture of less than 0.2-degrees. Films deposited on MgO (001) are mostly randomly oriented in the a, b-plane although preferential orientations with rotational angles of 11.5-degrees and 45-degrees were observed close to the substrate/film interface. On LaAlO3 (001) and NdGaO3 (001) substrates the a, b-plane orientation is improved and about half of the film is epitaxially oriented.

引用

页码：112 / 120

页数：9

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